BCV64B,215 datasheet

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Маркировка

BCV64B,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BCV64B,215 Collector- Emitter Voltage Vceo Max: 30 V at TR1, 6 V at TR2 Configuration: Dual Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V / 220 @ 2mA, 700mV Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949544 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.1 A Maximum Operating Frequency: 100 MHz at TR1 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-143, SOT-143B, TO-253AA Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: PNP Transistor Type: 2 PNP (Dual) Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 30V, 6V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 6 V, 30 V Collector- Emitter Voltage VCEO Max: 6 V, 30 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 220 at 2 mA at 5 V at TR 1 , 220 at 2 mA at 700 mV at TR 2 DC Current Gain hFE Max: 220 at 2 mA at 5 V Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: BCV64B T/R Other Names: 933835240215, BCV64B T/R
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12 шт.
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